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| STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N80 s s s s s s s V DSS 800 V R DS( on) <7 ID 2.1 A TYPICAL RDS(on) = 5 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION SOT-82 1 2 3 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING SOT-194 (option) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M(*) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 800 800 20 2.1 1.3 9.6 70 0.56 -65 to 150 150 Unit V V V A A A W W/o C o o C C (*) Pulse width limited by safe operating area December 1996 1/10 STK2N80 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.78 80 0.7 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 2.1 80 2.8 1.3 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 800 25 250 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 1 A 2.1 Min. 2 Typ. 3 5 Max. 4 7 Unit V A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 1 A VG S = 0 Min. 1.2 Typ. 1.9 460 55 22 600 70 30 Max. Unit S pF pF pF 2/10 STK2N80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 400 V ID = 1.5 A V GS = 10 V R G = 50 (see test circuit, figure 3) V DD = 640 V ID = 2 A V GS = 10 V R G = 50 (see test circuit, figure 5) V DD = 640 V ID = 2 A V GS = 10 V Min. Typ. 38 42 160 Max. 50 57 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 31 6 14 40 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V I D = 2 A R G = 50 VGS = 10 V (see test circuit, figure 5) Min. Typ. 70 25 108 Max. 90 32 140 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.1 A V GS = 0 920 18.4 40 I SD = 2 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 2.1 9.6 2 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/10 STK2N80 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STK2N80 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STK2N80 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 6/10 STK2N80 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STK2N80 SOT-82 MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F H 7.4 10.5 0.7 0.49 2.4 1.2 15.7 2.2 4.4 3.8 2.54 TYP. MAX. 7.8 11.3 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.04 0.047 0.618 0.087 0.173 0.150 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 DIM. C A F H c1 b b1 e3 e D B P032A 8/10 STK2N80 SOT-194 MECHANICAL DATA DIM. MIN. A B b b1 C c1 c2 D e e3 F H P S S1 T 4 2 0.1 7.4 10.5 0.7 0.49 2.4 1.2 1.3 6 2.2 4.4 3.8 2.54 45 (typ.) 0.157 0.079 0.004 mm TYP. MAX. 7.8 11.3 0.9 0.75 2.7 MIN. 0.291 0.413 0.028 0.019 0.094 0.047 0.051 0.236 0.087 0.173 0.150 0.100 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 C A F C1 S T P H e e3 P032B S1 b1 b c2 D 9/10 B STK2N80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express nts written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10 |
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